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Message: <blockquote data-quote="imhotep" data-source="post: 24610734" data-attributes="member: 562115">A couple of weeks ago, Everspin Technologies announced the pilot production of its 28nm 1-Gigabit(Gb) STT-MRAM.MRAM is not new but started way back in 2006 by Freescale who marketed the first 4Mbit MRAM chip.Freescale's MRAM division was later spun-off to form a new company named  Everspin.MRAMs are even currently used in some RAID controllers from several major vendors. MRAM stands for Magnetoresistive random-access memory - a technology that uses the electron spin to store information.Standard MRAM were called Toggle-MRAM, typically a single transistor, one MTJ cell (magnetic tunnel junction) device with data retention of over 20 years.The STT-MRAM (Spin-Transfer Torque) is a variant that has the advantage of achieving higher densities at lower cost. In a STT device the spin of the electrons is flipped using a spin-polarized current.Many other companies are also developing STT-MRAM tchnologies. Last February, Intel also announced its 22nm Fin-FET MRAM is production ready. The prototypes were 7Mb perpendicular STT-MRAM. Also IBM & Samsung are in the development stages.Researchers from Japan's Tohoku University recently developed a 128 Mb STT-MRAM device that's supposed to be the world's fastest.Probably with costs going down MRAM might be the most likely choice of post-flash solid state storage.</blockquote>

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